Preparation and characteristics study of nano-porous silicon UV photodetector
نویسندگان
چکیده
منابع مشابه
preparation and characterization of new co-fe and fe-mn nano catalysts using resol phenolic resin and response surface methodology study for fischer-tropsch synthesis
کاتالیزورهای co-fe-resol/sio2و fe-mn-resol/sio2 با استفاده از روش ساده و ارزان قیمت همرسوبی تهیه شدند. از رزین پلیمری resol در فرآیند تهیه کاتالیزور استفاده شد.
Quantum dot-doped porous silicon metal–semiconductor metal photodetector
In this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal-semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger than that of the undoped PS-MSM photodetector. The bandgap alignment between PS (approximately 1...
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Porous silicon (PSi) layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm² fixed current density for different etching times. The samples were coated with a 50-60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron micro...
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Optomechanical systems have enabled wide-band optical frequency conversion and multichannel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert optical information to electrical signals for further signal processing. In this paper we present a coupled silicon microresonator, which converts near-IR opt...
متن کامل1.55-mum and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector.
We have investigated the spectral responsivity of porous silicon Schottky barrier photodetectors in the wavelength range 0.4-1.7 mum . The photodetectors show strong photoresponsivity in both the visible and the infrared bands, especially at 1.55 mum . The photocurrent can reach 1.8 mA at a reverse bias of 6 V under illumination by a 1.55-mum , 10-mW laser diode. The corresponding quantum effic...
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ژورنال
عنوان ژورنال: Applied Nanoscience
سال: 2016
ISSN: 2190-5509,2190-5517
DOI: 10.1007/s13204-016-0544-9